Direct-Write Electron Beam Lithography

Direct write electron beam lithography requires chemistry suited to precise pattern formation at the micro- and nanoscale. At DisChem, our H-SiQ negative-tone resist is developed for direct-write thin-film EBL applications. H-SiQ is a hydrogen silsesquioxane resist derived from dry silica resin in a semiconductor-grade MIBK carrier solvent. We focus on providing specialized lithography chemistry that supports customers working on advanced patterning requirements and demanding electron beam fabrication processes.
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Phone Number : +1(814)-7726-603
Email ID : [email protected]
Address : 17295 Boot Jack Rd, Suite A PO Box 267 Ridgway, Pennsylvania 15853 USA


Website : https://discheminc.com/e-be ...